Influence of Series Massive Resistance on Capacitance and Conductance Characteristics in Gate-Recessed Nanoscale SOI MOSFETs

Table 2

Summarizing table of the interface trap capacitance 𝐶_it values.

𝐶it (pF); (ratio to expected 𝐶 value in %)	Interface trap density; 𝐷it (cm^−2eV^−1)
	10^10	10^12
𝐿=100 μm	0.13 (1.3%)	12.80 (130%)
𝐿=8 μm	0.01 (1%)	1.02 (102%)