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Active and Passive Electronic Components
Volume 2016, Article ID 8506507, 5 pages
http://dx.doi.org/10.1155/2016/8506507
Research Article

Noise Parameter Analysis of SiGe HBTs for Different Sizes in the Breakdown Region

1Department of Electrical Engineering, National Sun Yat-sen University, No. 70 Lienhai Rd., Kaohsiung 80424, Taiwan
2Institute of Communications Engineering, National Sun Yat-sen University, No. 70 Lienhai Rd., Kaohsiung 80424, Taiwan

Received 3 June 2016; Revised 9 September 2016; Accepted 18 September 2016

Academic Editor: Wei Wang

Copyright © 2016 Chie-In Lee et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Noise parameters of silicon germanium (SiGe) heterojunction bipolar transistors (HBTs) for different sizes are investigated in the breakdown region for the first time. When the emitter length of SiGe HBTs shortens, minimum noise figure at breakdown decreases. In addition, narrower emitter width also decreases noise figure of SiGe HBTs in the avalanche region. Reduction of noise performance for smaller emitter length and width of SiGe HBTs at breakdown resulted from the lower noise spectral density resulting from the breakdown mechanism. Good agreement between experimental and simulated noise performance at breakdown is achieved for different sized SiGe HBTs. The presented analysis can benefit the RF circuits operating in the breakdown region.