Active and Passive Electronic Components

Semiconductors: Materials, Physics, and Devices


Status
Published

Lead Editor

1National Institute for Materials Science, Tsukuba, Japan

2Wuhan University of Science and Technology, Wuhan, China

3University of Science and Technology Beijing, Beijing, China

4Institut Néel, Grenoble, France

5Xi’an Jiaotong University, Xi’an, China


Semiconductors: Materials, Physics, and Devices

Description

The Si, GaAs, and InP based semiconductor devices have improved our lives significantly during last century. For the purpose of further improving our living standard during this century, researches on new semiconductor materials and development of high-performance semiconductor devices are necessary. Wide-bandgap semiconductors, such as ZnO, SiC, GaN, Ga2O3, and diamond, are believed to be the next-generation semiconductors because of their excellent physical and chemical properties. They are promising candidates for fabrication of optoelectronic devices and semiconductor electronics, such as light emitters, solar cells, solar blind detectors, high-temperature and high-power electronics, gas sensors, high power microwave transistors, and microelectromechanical system (MEMS).

In order to fabricate high-performance semiconductor electronic and optoelectronic devices, several research fields are being developed, such as the high quality bulk or epitaxial layer growth, n-type and p-type doping, surface crystal quality improvement, interface quality of metal/semiconductor or insulator/semiconductor junctions, optimization of device fabrication processes, and new application development for the semiconductor devices. During recent few years, significant progresses in semiconductor growth and device technology have been developed. It would be valuable and meaningful to realize the research situations of them.

The purpose of this special issue is to publish high quality research papers as well as review articles for recent research in the growth of semiconductors, surface and interface physics, electronic and optoelectronic devices, and their applications. Authors are encouraged to contribute original research papers and review articles reflecting the current progress about the semiconductors.

Potential topics include, but are not limited to:

  • Growth of semiconductors, such as Si, GaAs, InP, ZnO, SiC, GaN, Ga2O3, and diamond
  • Surface and interface physics
  • Dopants, defects, and surface morphology
  • Metal/semiconductor, semiconductor/semiconductor, and insulator/semiconductor interfaces
  • Materials characterization and device fabrication process development
  • Semiconductors based optoelectronic and electronic devices
  • New applications of semiconductors
  • Advanced measurement system for the semiconductor devices
  • Microelectromechanical system (MEMS)
  • Current progress about the semiconductor devices
  • Biosensor and energy application of semiconductors
Active and Passive Electronic Components
 Journal metrics
Acceptance rate14%
Submission to final decision54 days
Acceptance to publication35 days
CiteScore1.100
Impact Factor-
 Submit