Improving Linearity and Robustness of RF LDMOS by Mitigating Quasi-Saturation Effect

<figure class="figure-group responsive"><div class="sub-figure" id="a"><object data="https://static.hindawi.com/articles/apec/volume-2019/8425198/figures/8425198.fig.006a.svgz" name="8425198.fig.006a" type="image/svg+xml"></object><div class="fig-label"><b>(a) </b>LDD1 and LDD2</div></div><div class="sub-figure" id="b"><object data="https://static.hindawi.com/articles/apec/volume-2019/8425198/figures/8425198.fig.006b.svgz" name="8425198.fig.006b" type="image/svg+xml"></object><div class="fig-label"><b>(b) </b>LDD1, LDD2, and LDD4</div></div><div class="sub-figure" id="c"><object data="https://static.hindawi.com/articles/apec/volume-2019/8425198/figures/8425198.fig.006c.svgz" name="8425198.fig.006c" type="image/svg+xml"></object><div class="fig-label"><b>(c) </b>LDD1, LDD2, LDD3, and LDD4</div></div><div class="sub-figure" id="d"><object data="https://static.hindawi.com/articles/apec/volume-2019/8425198/figures/8425198.fig.006d.svgz" name="8425198.fig.006d" type="image/svg+xml"></object><div class="fig-label"><b>(d) </b>Electric field at Y=0.01um</div></div></figure>

<p>Electric field distribution of device with different LDD structure.</p>

Active and Passive Electronic Components

fig6

Figure 6

Figure 6: Improving Linearity and Robustness of RF LDMOS by Mitigating Quasi-Saturation Effect 