Research Article
Improving Linearity and Robustness of RF LDMOS by Mitigating Quasi-Saturation Effect
Table 1
DC simulation results and doping condition of different devices.
| Condition | LDD4 to | LDD1 | LDD2 | LDD3 | LDD4 | Breakdown | Threshold | | | Poly (um) | Dose (cm−2) | Dose (cm−2) | Dose (cm−2) | Dose (cm−2) | voltage (V) | voltage (V) | (ohmmm) | (mA/mm) |
| A | NA | 1.8E+12 | 8.0E+11 | NA | NA | 70.15 | 1.25 | 13.25 | 177 | B | 2.2 | 1.8E+12 | 8.0E+11 | NA | 6.0E+11 | 70.76 | 1.26 | 12.83 | 179.7 | C | 2.2 | 1.8E+12 | 8.0E+11 | NA | 1.0E+12 | 70.55 | 1.26 | 12.77 | 180.3 | D | 2.2 | 1.8E+12 | 8.0E+11 | NA | 1.4E+12 | 71.41 | 1.26 | 12.52 | 182.5 | E | 2.2 | 1.7E+12 | 7.0E+11 | 5.0E+11 | 1.0E+12 | 71.52 | 1.26 | 12.21 | 183.2 | F | 2.2 | 1.7E+12 | 7.0E+11 | 7.0E+11 | 1.0E+12 | 70.75 | 1.26 | 11.87 | 185 | G | 2.2 | 1.7E+12 | 8.0E+11 | 7.0E+11 | 1.0E+12 | 70.25 | 1.26 | 11.62 | 189.6 | H | 2 | 1.8E+12 | 8.0E+11 | NA | 1.0E+12 | 70.15 | 1.26 | 12.62 | 181.2 | I | 2.4 | 1.8E+12 | 8.0E+11 | NA | 1.0E+12 | 70.51 | 1.26 | 12.99 | 178.1 |
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