Semianalytical Modelling and 2D Numerical Simulation of Low-Frequency Noise in Advanced N-Channel FDSOI MOSFETs

<div>2D numerical simulation of <i>S</i><sub><i>Id</i></sub>/<i>I</i><sub><i>d</i></sub><sup>2</sup>, with (CNF + CMF + Δ<i>r</i>)-based model, of front and buried oxide noise sources as a function of drain current for a gate length <i>L</i> = 985 nm. The front gate operating mode is considered.</div>

Active and Passive Electronic Components

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Figure 10

Figure 10: Semianalytical Modelling and 2D Numerical Simulation of Low-Frequency Noise in Advanced N-Channel FDSOI MOSFETs 