Semianalytical Modelling and 2D Numerical Simulation of Low-Frequency Noise in Advanced N-Channel FDSOI MOSFETs

<div>2D simulation results of Ids-Vgs characteristics for various gate effective lengths and Wm = 1 μm. Graph (a) is the linear variations, and graph (b) is semilogarithmic variations, the insert is the meshed structure of FDSOI (L = 15 nm).</div>

Active and Passive Electronic Components

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Figure 2

Figure 2: Semianalytical Modelling and 2D Numerical Simulation of Low-Frequency Noise in Advanced N-Channel FDSOI MOSFETs 