Research Article
Semianalytical Modelling and 2D Numerical Simulation of Low-Frequency Noise in Advanced N-Channel FDSOI MOSFETs
Figure 5
(a) Plots of SId/Id2 experimental data versus Id, at frequency 10 Hz, and in front gate mode and (b) plots of SVg experimental data versus (-Vth)/[1-θ2∙(-Vth)2] with corresponding data fit lines.
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