Semianalytical Modelling and 2D Numerical Simulation of Low-Frequency Noise in Advanced N-Channel FDSOI MOSFETs

<div>Comparison of experimental normalized drain current PSD versus <i>I</i><sub><i>d</i></sub> with (a) CNF + CMF + Δ<i>r</i>, 2D numerical simulation results, with RCS parameters, and with (b) CNF + CMF + Δ<i>r</i>, semianalytical model results for 14 nm FDSOI samples, for some effective gate lengths.</div>

Active and Passive Electronic Components

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Figure 6

Figure 6: Semianalytical Modelling and 2D Numerical Simulation of Low-Frequency Noise in Advanced N-Channel FDSOI MOSFETs 