Semianalytical Modelling and 2D Numerical Simulation of Low-Frequency Noise in Advanced N-Channel FDSOI MOSFETs

Table 1

Extracted main static MOSFET parameters (Uncertainty estimation: ±5%).

Lm (nm)	μ0 (cm^2/v·s)	Ɵ1^∗ (1/V)	Ɵ2 (V^−2)	Vth (V)	RsdWM (Ω·cm)
1000	147.66	−0.548	0.667	0.33	125·10^−4
300	145.00	−0.436	0.659	0.334	ײ
120	142.36	0.083	0.521	0.333	ײ
40	74.93	0.458	0.521	0.297	ײ
35	67.30	0.193	0.619	0.265	ײ
30	59.66	0.081	0.636	0.237	ײ