Active and Passive Electronic Components

Research Article

Semianalytical Modelling and 2D Numerical Simulation of Low-Frequency Noise in Advanced N-Channel FDSOI MOSFETs

Table 2

Extracted main noise fitting parameters (uncertainty estimation: ±5%).
L(nm)Nt1 (/eV/cm3)Nt2 (/eV/cm3)Kr
9852.53 × 10171.15 × 10152 × 10−7
1052.29 × 10171.55 × 10151 × 10−8
151.43 × 10172.75 × 10155 × 10−7