The application of hybrid thickfilm technology to the realization of precise active RC filters with passband
frequencies up to 3.5 kHz is described and it is shown that relatively expensive thin-film technology can often
be replaced by the simpler thickfilm process.

E.  M&#252;ller

M.  Gloger

E.  Schmidt

W.  Ulbrich

Precision Thickfilm Active RC Filters

After experimental work has been carried out to determine the required constants, the resistor film temperature
may be calculated from its dimensions and power dissipation using an expression which takes account of, and makes
a reasonably good approximation for, the heat dissipated by lateral conduction. The arithmetic is simple and well
suited to rapid processing using a programmed electronic calculator.

H. T. Law

A Rating Criterion for Film Resistors

This paper discusses the problems involved in obtaining reliable and reproducible thin films of Sb-doped
SnO2 films by the d.c. sputtering process. An attempt to characterize the process is made by correlating the
deposition parameters with the factors that contribute to the conductivity of the SnO2 films. The areas of
concern are identified, and guidelines are offered for making the process and the film properties controllable.

Anant G. Sabnis

D.C. Sputtering Process: Its Characterization and its Problems When Applied to Tin-Dioxide Thin-Films

The electrical properties of resistors comprising finely divided CdO and cadmium glass, were investigated. The
change in a temperature coefficient of resistance from about &#8722;500 ppm/&#8451; to +70 ppm/&#8451; was realized by addition
of a further component to the resistor paste. Differential thermal analysis, X-ray diffraction analysis and scanning
electron microscopy were used for studying crystalline phases in glass containing CdO.

R.  Ku&#382;el

J.  Broukal

Preparation and Properties of Thick Film Resistors Containing Cadmium Glasses and Cadmium Oxide

Thin ZnTe layers show memory switching characteristics. The electrical conduction in the non-ohmic off-state is
shown to be due to Poole&#8211;Frenkel emission. An electrothermal model is proposed to explain the off-on transition;
this model is confirmed by experiments. The characteristics of metal&#8211;ZnTe&#8211;metal sandwich structure as a memory
device are investigated. The switching parameters are stable during a series of switching events, but the rather poor
write&#8211;erase lifetime (200 cycles) still constitutes a handicap for the operation as a device.

Marc  Burgelman

A ZnTe Thin Film Memory Device

The results of a study of the application of conductive adhesives for attaching semiconductor chips to thin film Au
conductors is presented.The study concentrates on measuring the stability of the electrical conductivity of adhesive bonds for
semiconductor chips.Four types of conductive bonding agents and two types of semiconductor back metallization were tested at
raised temperatures for up to 10,000 hours.

C. W. L. Kooring

D.  Riphagen

Application of Conductive Adhesives in Microcircuits for &#8220;Long-Life&#8221; Equipment

It is shown that in order to interconnect more than 25 I.C. chips (SSI and MSI) or to use LSI chips together with
other kind of chips, the chips must be tested before mounting. Then only TAB- or CC-techniques can be used.
The advantages and disadvantages of the different techniques are discussed.

Hans  Danielsson

Different Chip Interconnecting Techniques

Nuclear electronic instruments for the measurement of the precise energy and time-of-flight of charged particles, e.g.
heavy ions, are quite often present on scientific satellites. In addition to the non-trivial electrical requirements, size,
weight, and power consumption have to be kept within strict limits for space flight electronics. Furthermore, such
instruments must possess a wide operating temperature range and resistance to irradiation. In the interest of cost
effectiveness it is desirable to develop modules with a sufficiently wide application to enable their use on more than
one mission. Because of the small quantities (expected need is in the order of some hundred circuits per year) and
the resistance and capacitance values required, a hybrid thick film approach is considered to be the most economical
solution. The development of two amplifier modules took place in a co-operation between the Max-Planck-Institut
f&#xFC;r Aeronomie in Lindau/Harz (scientific and environmental requirements), the Hahn-Meitner-Institut Berlin
(irradiation treatment), the Lehrstuhl f&#xFC;r Elektronische Schaltungen of the Ruhr-Universit&#xE4;t Bochum (electrical
design), and the Philips Forschungslaboratorium Hamburg (technological implementation and production of
prototypes). The results and experiences are reported in this paper.

Walter Funk

Wolfgang Winkelnkemper

Hybrid Amplifier Modules for Nuclear Measurements in Space Flight Experiments

A complete discussion with an extension to the high temperature range of the main results of a recent theory1 on
the electrical conduction and current noise in discontinuous metal films is given. In this theory the main conduction
mechanism is a direct-tunnelling process of the electrons between metal islands within the insulator substrate. The
tunnelling electrons must overcome a potential barrier which is temperature dependent. The model assumes that
the electrons trapped in surface states can tunnel in the metal states giving rise to a double charge layer at the
interface. The current noise is generated by a modulation mechanism of the carrier direct tunnelling due to thermal
fluctuation of the potential barrier height, generated by a corresponding fluctuation of the surface charge.Experimental results for the conductivity and current noise behaviour on Au film deposited on sapphire tube are
also given up to a temperature of about 950 K, and interpreted on the basis of the above theory.

M. Celasco

A. Masoero

P. Mazzetti

A. Stepanescu

Generalized Theory of Electrical Conductivity and Current Noise for Discontinuous Metal Films Over a
Wide Range of Temperatures

This paper is concerned with the permanent connection of electronic components into sub-systems and is based on
the report of an ERC Working Party that investigated the subject during 1978 and 1979. After an initial description
of the interconnection concepts and the relationship the field has to electronic assembly systems in general, a survey
is given of the marketing data that is available that defines the economic importance of the field. This survey
includes new data obtained by the Working Party. Figures are given for the rest of Europe in general and the UK in
particular and it is noted that the Output at Sales Value in the UK of intereconnection technology products is almost
the same as the Output at Sales Value of ICs in the UK. Within permanent interconnection technology two-thirds of
the Output at Sales Value is associated with PWBs and one-third with thick/thin film circuits.Research Work in the field is discussed and a division between immediate time scale problems and those involving
a longer time scale is suggested. Twenty-nine immediate time scale R &#38; D problems have been recognized covering
all three interconnection technologies; longer time scale problems will be associated with the continuing decrease in
the size of add-on electronic components.It is concluded that large, fast computer systems will require a decrease in the size and spacing of interconnections
to match those of the semiconductor chip. This means simultaneous design of semiconductor and
associated interconnection structures tasks well-suited to vertically integrated companies. In contrast, many real
time subassemblies will benefit from greater chip complexity and need fewer outgoing leads per chip, i.e. at wider
spacings &#8211; needs that can be met by the development of existing techniques. Finally it is suggested that future
distribution of added value in electronic assembly operations is likely to give all sectors of interconnection business
a steady upward sales trend, with both hybrid and semiconductor manufacturers seeking specialized subsystems
markets to replace their present &#8220;all things to all customers&#8221; policies.

D. S. Campbell

D.  Boswell

Permanent Interconnection Technology

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Active and Passive Electronic Components provides a forum for the science and technology of all types of electronic components, and publishes experimental and theoretical papers on topics such as transistors, hybrid circuits and sensors.

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