Epitaxial Growth of Germanium on Silicon for Light Emitters
Figure 11
(a) Room temperature photoluminescence of the tensile-strained Ge/SiGe MQW of the samples; (b) dependence of photoluminescence peak energy on the thickness of Ge well layer. The calculated direct band transition energy due to quantum confinement effect at Γ point is plotted as dashed line.
