Surface Passivation and Antireflection Behavior of ALD TiO₂ on n-Type Silicon for Solar Cells

Table 1

Estimation of grain size of TiO₂ thin films by SEM and XRD.

	ALD 200°C	ALD 300°C	ALD 400°C	ALD 500°C
Grain size from SEM (nm)	110	70	45	70
Grain size from XRD (nm)	39	31	22	25