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International Journal of Photoenergy
Volume 2014, Article ID 621789, 8 pages
http://dx.doi.org/10.1155/2014/621789
Research Article

Void Shapes Controlled by Using Interruption-Free Epitaxial Lateral Overgrowth of GaN Films on Patterned SiO2 AlN/Sapphire Template

Institute of Lighting and Energy Photonics, National Chiao Tung University, Tainan 71150, Taiwan

Received 20 February 2014; Revised 26 April 2014; Accepted 2 June 2014; Published 18 June 2014

Academic Editor: Nelson Tansu

Copyright © 2014 Yu-An Chen et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Yu-An Chen, Cheng-Huang Kuo, Li-Chuan Chang, and Ji-Pu Wu, “Void Shapes Controlled by Using Interruption-Free Epitaxial Lateral Overgrowth of GaN Films on Patterned SiO2 AlN/Sapphire Template,” International Journal of Photoenergy, vol. 2014, Article ID 621789, 8 pages, 2014. https://doi.org/10.1155/2014/621789.