Void Shapes Controlled by Using Interruption-Free Epitaxial Lateral Overgrowth of GaN Films on Patterned SiO₂ AlN/Sapphire Template

Figure 5

The EPD images over 5 × 5 μm² scanning area of (a) sample-C, (b) sample-R, (c) sample-T, and (d) sample-P.

(a)

(b)

(c)

(d)