Void Shapes Controlled by Using Interruption-Free Epitaxial Lateral Overgrowth of GaN Films on Patterned SiO₂ AlN/Sapphire Template

Table 1

Full width at half-maximum values of 𝜔 rocking curves measured by XRD.

Sample	FWHM (arcsecs)
	(002)	(004)	(006)	(102)	(105)
Sample-C	485	479	480	600	603
Sample-R	376	362	355	322	384
Sample-T	433	454	420	408	459
Sample-P	416	420	409	360	426