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International Journal of Photoenergy
Volume 2014, Article ID 959620, 4 pages
Research Article

Low-Cost ZnO:YAG-Based Metal-Insulator-Semiconductor White Light-Emitting Diodes with Various Insulators

Department of Electro-Optical Engineering, National Taipei University of Technology, No. 1, Section 3, Chung-Hsiao E. Road, Taipei 106, Taiwan

Received 13 March 2014; Accepted 9 July 2014; Published 15 July 2014

Academic Editor: Hao-Chung Kuo

Copyright © 2014 Lung-Chien Chen et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


ZnO:YAG-based metal-insulator-semiconductor (MIS) diodes with various insulators were synthesized on an indium tin oxide (ITO) glass by ultrasonic spray pyrolysis. SiO2 and MnZnO (MZO) were separately used as insulators. X-ray diffraction revealed the crystalline structure of the ZnO:YAG film. The photoluminescence (PL) properties of the ZnO:YAG film were studied and the color of photoluminescence was found to be almost white. The electrical properties of the diodes with different insulators and thicknesses were compared. The diode with the SiO2 insulator had a lower threshold voltage, smaller leakage current, and a higher series resistance than that with the MZO insulator layer.