International Journal of Photoenergy

International Journal of Photoenergy / 2020 / Article
Special Issue

Radiation Effects in Solar Cells and Optoelectronic Devices

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Corrigendum | Open Access

Volume 2020 |Article ID 4258307 | https://doi.org/10.1155/2020/4258307

Milić Pejović, Olivera Ciraj-Bjelac, Milojko Kovačević, Zoran Rajović, Gvozden Ilić, "Corrigendum to “Sensitivity of P-Channel MOSFET to X- and Gamma-Ray Irradiation”", International Journal of Photoenergy, vol. 2020, Article ID 4258307, 2 pages, 2020. https://doi.org/10.1155/2020/4258307

Corrigendum to “Sensitivity of P-Channel MOSFET to X- and Gamma-Ray Irradiation”

Received16 Apr 2020
Accepted22 Jun 2020
Published31 Aug 2020

In the article titled “Sensitivity of P-Channel MOSFET to X- and Gamma-Ray Irradiation” [1], there was an error in the drawing of Figure 2, which should be corrected as follows:

References

  1. M. Pejović, O. Ciraj-Bjelac, M. Kovačević, Z. Rajović, and G. Ilić, “Sensitivity of p-channel MOSFET to X- and gamma-ray irradiation,” International Journal of Photoenergy, vol. 2013, Article ID 158403, 6 pages, 2013. View at: Publisher Site | Google Scholar

Copyright © 2020 Milić Pejović et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


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