Research Article
Impact of Split Gate in a Novel SOI MOSFET (SPG SOI) for Reduction of Short-Channel Effects: Analytical Modeling and Simulation
Table 1
Parameters for simulation of two transistors (SPG and SG transistors).
| Parameter | Value |
| Gate length, | 100 nm | Gate length, | 100 nm | Front-gate oxide thickness, | 5 nm | Back-gate oxide thickness, | 5 nm | Silicon film thickness, | 12 nm | Gap length, | 10 nm | Body doping, | 6 × 1016 cm−3 | Source/drain doping, | 1 × 1020 cm−3 | Gate metal work function, WF | 4.5 ev | Voltage difference | 0.75 V | Gate-(-) to source voltage, | 0.15 V | Gate-(-) to source voltage, | 0.9 V |
Substare voltage, | 0 V |
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