Impact of Split Gate in a Novel SOI MOSFET (SPG SOI) for Reduction of Short-Channel Effects: Analytical Modeling and Simulation

Table 1

Parameters for simulation of two transistors (SPG and SG transistors).

Parameter	Value
Gate length, 𝐿1	100 nm
Gate length, 𝐿2	100 nm
Front-gate oxide thickness, 𝑡𝑓	5 nm
Back-gate oxide thickness, 𝑡𝑏	5 nm
Silicon film thickness, 𝑡Si	12 nm
Gap length, 𝑍	10 nm
Body doping, 𝑁𝐴	6 × 10^16 cm^−3
Source/drain doping, 𝑁𝐷	1 × 10^20 cm^−3
Gate metal work function, WF	4.5 ev
Voltage difference	0.75 V
Gate-(𝐺1-) to source voltage, 𝑉GS1	0.15 V
Gate-(𝐺2-) to source voltage, 𝑉GS2	0.9 V
Substare voltage, 𝑉SUB	0 V