Drive Current Enhancement in TFET by Dual Source Region

Figure 11

(a) Gate capacitance as a function of for four different values of oxide thickness for DS n-TFET, (b) delay versus supply voltage for DS-TFET and conventional TFET for different oxide thickness, (c) total energy per operation versus the maximum frequency for DS-TFET and conventional TFET corresponding to the same other dimensions and parameters, and (d) EDP versus supply voltage for DS and conventional TFET for three different values of oxide thickness.

(a)

(b)

(c)

(d)