Drive Current Enhancement in TFET by Dual Source Region

<div>(a) Transfer characteristics of the Ge/Si DS-TFET, DS-TFET, and conventional TFET; (b) <svg height="12.4535pt" id="M53" style="vertical-align:-3.16517pt" version="1.1" viewbox="-0.0498162 -9.28833 36.7384 12.4535" width="36.7384pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M418 650H141L133 618C225 611 232 604 218 531L141 120C126 45 119 37 33 32L24 0H301L308 32C220 37 214 44 227 120L305 531C319 605 325 611 411 618L418 650Z" id="g50-74"></path><glyph.data ascent="3443" descent="-2856" horiz-adv-x="442" vert-adv-y="442"></glyph.data></g><g transform="matrix(.0091,0,0,-0.0091,4.797,3.001)"><path d="M262 451C169 451 38 375 38 210C38 98 121 -12 261 -12C360 -12 481 64 481 227C481 351 386 451 262 451ZM249 414C337 414 385 320 385 204C385 70 333 25 272 25C189 25 134 117 134 241C134 355 189 414 249 414Z" id="g58-109"></path><glyph.data ascent="1007" descent="-369" horiz-adv-x="519" vert-adv-y="519"></glyph.data></g><g transform="matrix(.0091,0,0,-0.0091,9.41,3.001)"><path d="M532 0V30C473 38 467 38 467 107V298C467 395 416 451 336 451C307 451 279 439 251 420C226 404 205 389 185 374V453C142 434 94 422 43 413V386C98 378 104 373 104 309V107C104 41 100 38 31 30V0H251V30C191 35 185 40 185 107V337C216 364 255 389 295 389C360 389 386 347 386 276V110C386 44 380 35 321 30V0H532Z" id="g58-108"></path><glyph.data ascent="1007" descent="-369" horiz-adv-x="557" vert-adv-y="557"></glyph.data></g><g transform="matrix(.013,0,0,-0.013,15.014,0)"><path d="M381 704H317L48 -163H112L381 704Z" id="g50-48"></path><glyph.data ascent="3443" descent="-2856" horiz-adv-x="429" vert-adv-y="429"></glyph.data></g><g transform="matrix(.013,0,0,-0.013,20.596,0)"><path d="M418 650H141L133 618C225 611 232 604 218 531L141 120C126 45 119 37 33 32L24 0H301L308 32C220 37 214 44 227 120L305 531C319 605 325 611 411 618L418 650Z" id="g50-74"></path><glyph.data ascent="3443" descent="-2856" horiz-adv-x="442" vert-adv-y="442"></glyph.data></g><g transform="matrix(.0091,0,0,-0.0091,25.393,3.001)"><path d="M262 451C169 451 38 375 38 210C38 98 121 -12 261 -12C360 -12 481 64 481 227C481 351 386 451 262 451ZM249 414C337 414 385 320 385 204C385 70 333 25 272 25C189 25 134 117 134 241C134 355 189 414 249 414Z" id="g58-109"></path><glyph.data ascent="1007" descent="-369" horiz-adv-x="519" vert-adv-y="519"></glyph.data></g><g transform="matrix(.0091,0,0,-0.0091,30.006,3.001)"><path d="M100 439H52L25 408L28 396H100V106C100 41 92 35 31 30V0H250V29C188 37 181 41 181 106V396H372V107C372 40 365 37 309 29V0H537V29C461 37 453 40 453 106V396H564C576 403 579 428 574 439H453V469C452 558 462 604 474 623S500 656 527 656C562 656 589 634 608 615C619 604 628 607 639 615C647 622 658 633 661 641C666 653 664 664 656 674C637 696 609 708 572 710C528 703 483 682 439 638C418 661 380 685 320 688C269 683 230 666 190 633C139 593 122 550 113 525S100 476 100 451V439ZM372 439H181V461C181 530 194 571 211 598C226 621 248 643 287 643C343 643 379 607 400 578C391 561 384 546 381 529C376 510 372 486 372 457V439Z" id="g58-26"></path><glyph.data ascent="1007" descent="-369" horiz-adv-x="572" vert-adv-y="572"></glyph.data></g></svg> ratio versus gate length.</div>

Journal of Electrical and Computer Engineering

Drive Current Enhancement in TFET by Dual Source Region

Figure 3