Toward 3D Integration of 1D Conductors: Junctions of InAs Nanowires
Figure 5
Top nanowire as gate for field effect control of bottom nanowire. Voltage, , is applied to electrodes 1 and 2 simultaneously. A bias voltage of 0.65 V on electrode 3 drives the bottom nanowire. Left inset shows the linear conductance of the bottom nanowire at this bias, with arrow pointing to the voltage the backgate is set in the main image measurement. Right inset is a profile view schematic of the setup. The field effect from the top nanowire and backgate modulate the current in the bottom nanowire. These measurements were performed at 4 K.
