Temperature-Dependent Physical and Memory Characteristics of Atomic-Layer-Deposited Metal Nanocrystal Capacitors
Figure 8
(a) C-V hysteresis characteristics with different sweeping gate voltages at a PDA of 950°C; (b) a C-V hysteresis memory window versus sweeping gate voltages with different annealing temperatures from 850–1000°C. A high-κ Al2O3 charge-trapping layer is also shown for comparison.
