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Journal of Nanomaterials
Volume 2011, Article ID 850930, 7 pages
Research Article

ZnO Nanowire Formation by Two-Step Deposition Method Using Energy-Controlled Hollow-Type Magnetron RF Plasma

Department of Electrical Engineering, Graduate School of Engineering, Tohoku University, Miyagi, Sendai 980-8579, Japan

Received 14 June 2011; Accepted 16 September 2011

Academic Editor: Renzhi Ma

Copyright © 2011 Hideki Ono and Satoru Iizuka. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


ZnO nanowire was produced in RF (radio frequency) discharge plasma. We employed here a two-step deposition technique. In the 1st step, zinc atoms were sputtered from a zinc target to create zinc nuclei on a substrate before the growth of ZnO nanostructure. Here, we used pure argon plasma for physical sputtering. In the 2nd step, we employed an oxygen discharge mixed with argon, where oxygen radicals reacted with zinc nuclei to form ZnO nanostructures. Experimental parameters such as gas flow ratio and target bias voltage were controlled in O2/Ar plasma. Properties of the depositions were analysed by SEM and Raman spectroscopy. We found that many folded and bundled nanowires formed in the 2nd step. The diameter of wires was typically 10–100 nm. We also discussed a growth mechanism of ZnO nanowires.