Robustness Comparison of Emerging Devices for Portable Applications

Table 1

32 nm DG FinFET device default parameters values.

Parameter	𝑛FinFET	𝑝FinFET
𝐿𝑔 (nm)	32	32
𝑇si (nm)	8.6	8.6
𝑇ox (nm)	1.4	1.4
𝑁ch (cm^−3)	2×10^16	2×10^16
𝑉th (V)	0.29	−0.25
𝐻fin (nm)	13	13
𝑇fin (nm)	8.6	8.6
Gate material	Metal	Metal
Doping profile	Uniform	Uniform