Robustness Comparison of Emerging Devices for Portable Applications

Table 3

Effect of PVT variation on SNM of CNFET and FinFET at 𝑉_DD=0.2 V.

Parameter variation		32 nm CNFET			32 nm FinFET
		NM𝐻(mV)	NM𝐿(mV)	𝑉𝑀(mV)	NM𝐻(mV)	NM𝐿(mV)	𝑉𝑀(mV)
	0%	67.6	69.443	100.05	64.24	51.73	93.81
𝑇OX	+10%	68.46	68.38	100.5	66.73	49.53	93.16
	−10%	68.1	67.73	100.36	70.21	45.38	94.8
𝐿𝑔	+10%	67.4	66.83	100.26	63.98	49.8	93.16
	−10%	68.67	69.86	99.39	62.08	41.48	97.75
𝑉DD	+10%	77.91	79.78	110.04	79.47	65.944	97.75
	−10%	57.84	57.81	90.13	59.56	37.67	81.71
𝑉th	+10%	68.47	67.48	99.39	62.08	41.8	97.75
	−10%	68.93	67.85	99.7	69.84	59.05	89.71
𝑇	25°C	67.6	69.443	100.05	64.24	51.73	93.81
	50°C	65.38	65.48	99.72	65.29	33.75	77.83
	85°C	61.98	62.18	99.72	70.92	28.48	72.16