A Novel Method to Grow Vertically Aligned Silicon Nanowires on Si (111) and Their Optical Absorption
Figure 5
Plan-view SEM images of the SiNWs grown at 850°C for 20 min by employing (a) direct heating procedures, and (b), (c), and (d): ramp-cooling procedures in Figure 2(b) on the Si (111), glass, and Si (100) substrates, respectively, by H2 annealing at 650°C, ramp cooling to 600°C, and heating in SiCl4/H2/Ar to 850°C for the growth of SiNWs. Each dot represents a nanowire vertical to the substrate. The cross-sectional SEM image of sample (b) is shown in (e).
