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Journal of Nanomaterials
Volume 2012 (2012), Article ID 286104, 7 pages
Research Article

Figures of Merit for High-Performance Transparent Electrodes Using Dip-Coated Silver Nanowire Networks

1Department of Electrical & Computer Engineering, University of Delaware, Newark, DE 19716, USA
2Department of Electrical Engineering, École de Technologie Supérieure, Montréal, QC, Canada H3C 1K3

Received 15 June 2012; Revised 20 August 2012; Accepted 21 August 2012

Academic Editor: Yanqiu Zhu

Copyright © 2012 Sergio B. Sepulveda-Mora and Sylvain G. Cloutier. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Homogeneous, highly conductive, and transparent silver nanowire thin films were fabricated using a simple dip-coating technique and a subsequent annealing step. Silver nanowires with two different average lengths (11 μm and 19 μm) were used in the sample preparation to analyze the dependence of the sheet resistance on the length of the one-dimensional nanostructures. The best sample had a sheet resistance of 10.2  with optical transmittance of 89.9%. Two figures of merit, the electrical to optical conductivity ratio and , were obtained for all the samples in order to measure their performance as transparent conductive materials.