Directed Self-Assembly of Block Copolymer for Bit Patterned Media with Areal Density of 1.5 Teradot/Inch2 and Beyond
Figure 2
SEM images of patterns created by a rotary stage e-beam system operating at 100 keV. (a) Large-scale SEM image of ZEP520 resist pattern including a portion of patterned several 100 μm wide patterned circular full tracks. (b) SEM image of a 40 nm thick ZEP520 resist pattern observed from one of the circular tracks. The resist pattern exhibits an hcp dots array with a pattern pitch of 30.5 nm (0.8 Td/in2). (c) 6 nm thick Cr dots (0.8 Td/in2) after a lift-off process from ZEP520 resist pattern.
