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Journal of Nanomaterials
Volume 2013 (2013), Article ID 636239, 8 pages
Research Article

The Effect of Bilayer Graphene Nanoribbon Geometry on Schottky-Barrier Diode Performance

1Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 Skudai, Johor Bahru, Malaysia
2Nanotechnology Research Center Nanoelectronic Group, Physics Department, Urmia University, Urmia 57147, Iran
3Department of Electrical Engineering, Islamic Azad University, Yasooj Branch, Yasooj 63614, Iran
4Centre for Artificial Intelligence and Robotics (CAIRO), UTM, 81310 Skudai, Johor Bahru, Malaysia
5Department of Electrical, Computer and Biomedical Engineering, Islamic Azad University, Qazvin Branch, Qazvin 34185-1416, Iran

Received 21 August 2013; Revised 11 October 2013; Accepted 17 October 2013

Academic Editor: Munawar A. Riyadi

Copyright © 2013 Meisam Rahmani et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Bilayer graphene nanoribbon is a promising material with outstanding physical and electrical properties that offers a wide range of opportunities for advanced applications in future nanoelectronics. In this study, the application of bilayer graphene nanoribbon in schottky-barrier diode is explored due to its different stacking arrangements. In other words, bilayer graphene nanoribbon schottky-barrier diode is proposed as a result of contact between a semiconductor (AB stacking) and metal (AA stacking) layers. To this end, an analytical model joint with numerical solution of carrier concentration for bilayer graphene nanoribbon in the degenerate and nondegenerate regimes is presented. Moreover, to determine the proposed diode performance, the carrier concentration model is adopted to derive the current-voltage characteristic of the device. The simulated results indicate a strong bilayer graphene nanoribbon geometry and temperature dependence of current-voltage characteristic showing that the forward current of the diode rises by increasing of width. In addition, the lower value of turn-on voltage appears as the more temperature increases. Finally, comparative study indicates that the proposed diode has a better performance compared to the silicon schottky diode, graphene nanoribbon homo-junction contact, and graphene-silicon schottky diode in terms of electrical parameters such as turn-on voltage and forward current.