Long Channel Carbon Nanotube as an Alternative to Nanoscale Silicon Channels in Scaled MOSFETs

Figure 3

Drain characteristic of 60 nm single-walled carbon nanotube (colour solid lines) and 45 nm MOSFET (diamonds) with 0.1 V gate increment. Initial 𝑉_𝐺 for MOSFET is 0.4 V (bottom).