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Journal of Nanomaterials
Volume 2014, Article ID 103640, 5 pages
Research Article

The Formation Site of Noninterfacial Misfit Dislocations in InAs/GaAs Quantum Dots

State Key Laboratory of Information Photonics and Optical Communications, Institute of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, P.O. Box 49 (Room 339), Beijing 100876, China

Received 30 November 2013; Revised 7 January 2014; Accepted 7 January 2014; Published 16 February 2014

Academic Editor: Wen Lei

Copyright © 2014 Shuai Zhou et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Taking elastic anisotropy into consideration, we use a dislocation position dependent model to calculate the preferential formation site of noninterfacial 60° mixed dislocation segment in ellipsoid shaped InAs/GaAs quantum dots (QDs) which is observed in the experiment. From the result, it is clear that the positions near the right edge of the quantum dot are the energy favorable areas for the noninterfacial 60° mixed dislocations.