Investigation of Low-Frequency Noise Characterization of 28-nm High-k pMOSFET with Embedded SiGe Source/Drain

<table>The gate current density (<svg height="18.362499" id="M117" style="vertical-align:-4.77652pt" version="1.1" viewbox="0 0 15.2875 18.362499" width="15.2875" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,11.113)"><path d="M434 650l-5 -28q-60 -8 -75 -20.5t-25 -69.5l-71 -395q-20 -107 -57.5 -168t-106.5 -94q-40 -18 -61 -20l-10 32q77 23 113 108q21 50 41 160l68 377q10 57 -1.5 69.5t-76.5 20.5l6 28h261z" id="x1D43D"></path></g>
<g transform="matrix(.012,-0,0,-.012,7.825,15.188)"><path d="M546 430q-14 -33 -37.5 -140t-38.5 -209q-29 -195 -156 -289q-29 -21 -70 -37t-78 -16q-62 0 -102.5 37t-40.5 69q0 27 26 48q19 15 25 -3q13 -43 46.5 -69t87.5 -26q55 0 83 21q29 22 50 65t43 140q14 64 29 163h-2q-55 -81 -149 -152q-59 -44 -102 -44q-23 0 -43.5 30
t-20.5 85q0 74 32.5 145.5t84.5 117.5q40 35 100 58.5t117 23.5q21 0 65 -8q30 -6 44 -6zM456 386q-40 16 -81 16q-29 0 -64 -13q-42 -17 -85 -97q-19 -36 -31.5 -86t-12.5 -86q0 -64 30 -64q20 0 52.5 21t60.5 52q74 81 95 123q26 62 36 134z" id="x1D454"></path></g>
</svg>) versus gate voltage for HK pMOSFET with and without embedded SiGe S/D.</table>

Journal of Nanomaterials

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Figure 5

Figure 5: Investigation of Low-Frequency Noise Characterization of 28-nm High-k pMOSFET with Embedded SiGe Source/Drain 