Investigation of Low-Frequency Noise Characterization of 28-nm High-k pMOSFET with Embedded SiGe Source/Drain

<table>Plot of capture time (<svg height="12.15" id="M118" style="vertical-align:-3.2316pt" version="1.1" viewbox="0 0 13.7875 12.15" width="13.7875" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,7.863)"><path d="M471 456q-22 -60 -37 -85q-20 -3 -84 -3q-9 0 -29 2t-29 2q-38 -145 -54 -234q-15 -80 14 -80q23 0 68 38l14 -25q-78 -83 -137 -83q-50 0 -50 64q0 25 7 57l67 266q-57 4 -98 -9t-80 -49l-20 21q14 18 27 31t36.5 30t56.5 26t73 9q26 0 82.5 -2t89.5 -2q21 0 32 5t24 24
z" id="x1D70F"></path></g>
<g transform="matrix(.012,-0,0,-.012,8.275,11.95)"><path d="M383 397q0 -32 -35 -49q-12 -6 -23 8q-37 45 -84 45t-90 -71q-40 -65 -40 -167q0 -57 22 -86t59 -29q38 0 81.5 24.5t69.5 51.5l16 -21q-44 -53 -104 -84t-109 -31q-56 0 -89.5 41t-33.5 117q0 61 30 124t79 105q33 28 81 50.5t86 22.5q34 0 59 -15.5t25 -35.5z" id="x1D450"></path></g>
</svg>) over emission time (<svg height="12.15" id="M119" style="vertical-align:-3.2316pt" version="1.1" viewbox="0 0 13.8875 12.15" width="13.8875" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,7.863)"><path d="M471 456q-22 -60 -37 -85q-20 -3 -84 -3q-9 0 -29 2t-29 2q-38 -145 -54 -234q-15 -80 14 -80q23 0 68 38l14 -25q-78 -83 -137 -83q-50 0 -50 64q0 25 7 57l67 266q-57 4 -98 -9t-80 -49l-20 21q14 18 27 31t36.5 30t56.5 26t73 9q26 0 82.5 -2t89.5 -2q21 0 32 5t24 24
z" id="x1D70F"></path></g>
<g transform="matrix(.012,-0,0,-.012,8.275,11.95)"><path d="M391 364q0 -28 -20.5 -53.5t-50 -43.5t-70 -34t-73.5 -25t-68 -17v-29q0 -48 20 -81t65 -33q73 0 157 76l16 -23q-107 -113 -221 -113q-21 0 -40.5 6.5t-39 22t-31.5 47t-12 75.5q0 69 33.5 139.5t95.5 114.5q77 55 143 55q42 0 69 -24.5t27 -59.5zM313 350
q0 26 -14.5 40.5t-37.5 14.5q-32 0 -44 -7q-82 -46 -104 -175q200 49 200 127z" id="x1D452"></path></g>
</svg>) versus gate overdrive for HK pMOSFET with and without embedded SiGe S/D.</table>

Journal of Nanomaterials

fig7

Figure 7

Figure 7: Investigation of Low-Frequency Noise Characterization of 28-nm High-k pMOSFET with Embedded SiGe Source/Drain 