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Journal of Nanomaterials
Volume 2014, Article ID 850915, 5 pages
http://dx.doi.org/10.1155/2014/850915
Research Article

Terahertz Performance of a GaN-Based Planar Nanochannel Device

1Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510006, China
2State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China

Received 13 January 2014; Revised 16 March 2014; Accepted 25 March 2014; Published 10 April 2014

Academic Editor: Sheng-Po Chang

Copyright © 2014 K. Y. Xu et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

K. Y. Xu, Y. N. Wang, C. J. Zheng, J. W. Xiong, and G. Wang, “Terahertz Performance of a GaN-Based Planar Nanochannel Device,” Journal of Nanomaterials, vol. 2014, Article ID 850915, 5 pages, 2014. https://doi.org/10.1155/2014/850915.