Research Article

Enhanced Device and Circuit-Level Performance Benchmarking of Graphene Nanoribbon Field-Effect Transistor against a Nano-MOSFET with Interconnects

Figure 14

(a) PDP and (b) EDP of MOSFET logic gates for copper interconnect length from 0 to 100 μm.
879813.fig.0014a
(a)
879813.fig.0014b
(b)