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Journal of Nanomaterials
Volume 2015 (2015), Article ID 124640, 5 pages
http://dx.doi.org/10.1155/2015/124640
Research Article

Diamond Based Field-Effect Transistors of Zr Gate with Dielectric Layers

Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi’an Jiaotong University, Shaanxi, Xi’an 710049, China

Received 24 March 2015; Accepted 23 April 2015

Academic Editor: Jose Alvarez

Copyright © 2015 W. Wang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

W. Wang, C. Hu, S. Y. Li, et al., “Diamond Based Field-Effect Transistors of Zr Gate with Dielectric Layers,” Journal of Nanomaterials, vol. 2015, Article ID 124640, 5 pages, 2015. doi:10.1155/2015/124640