Substrate-Dependent Differences in the Crystal Structures and Optical Properties of ZnSe Nanowires

Figure 4

(a) Field-emission current versus applied electric field for a FED device constructed of ZnSe nanowires on graphene. The inset shows a schematic of the field-emitting structure used, which employs CNT/ITO and ZnSe nanowire/graphene as its emitter/cathode and phosphor/anode, respectively. (b) Light-emission luminance graph of a ZnSe nanowire phosphor on graphene. Insets are optical images of the red light emissions of the ZnSe/graphene device. Peak emission occurred at ~627 nm.

(a)

(b)