MOCVD Growth and Fabrication of High Power MUTC Photodiodes Using InGaAs-InP System

Table 3

Summary of the RF responses of different devices with corresponding photocurrent at 5 V. The calculated RC bandwidth includes the 50 Ω load resistance.

Diameter (µm)	Photocurrent (mA) at 5 V	(Ω)	(pF)	RC bandwidth (GHz)	3-dB bandwidth (GHz)	mA⋅GHz
24	19.5	24.5	0.065	32.7	≫20	NA
30	37.5	21.0	0.116	19.3	19.1	716.25
50	100.5	12.0	0.448	5.76	5.5	552.75
80	136.5; 149 at 7 V	5.5	1.020	2.82	2.8	417.2 at 7 V