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Journal of Nanomaterials
Volume 2015, Article ID 478375, 15 pages
Research Article

Gallium Nitride Electrical Characteristics Extraction and Uniformity Sorting

1Department of Electrical and Electronic Engineering, Ta Hua University of Science and Technology, No. 1, Dahua Road, Qionglin Shiang, Hsinchu County 30740, Taiwan
2Department of Mechanical Engineering, National Chiao Tung University, No. 1001, University Road, Hsinchu City 30010, Taiwan

Received 6 March 2015; Accepted 16 April 2015

Academic Editor: Meiyong Liao

Copyright © 2015 Shyr-Long Jeng et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


This study examined the output electrical characteristics—current-voltage (I-V) output, threshold voltage, and parasitic capacitance—of novel gallium nitride (GaN) power transistors. Experimental measurements revealed that both enhanced- and depletion-mode GaN field-effect transistors (FETs) containing different components of identical specifications yielded varied turn-off impedance; hence, the FET quality was inconsistent. Establishing standardized electrical measurements can provide necessary information for designers, and measuring transistor electrical characteristics establishes its equivalent-circuit model for circuit simulations. Moreover, high power output requires multiple parallel power transistors, and sorting the difference between similar electrical characteristics is critical in a power system. An isolated gate driver detection method is proposed for sorting the uniformity from the option of the turn-off characteristic. In addition, an equivalent-circuit model for GaN FETs is established on the basis of the measured electrical characteristics and verified experimentally.