Metal-Insulator Phase Transition in Quasi-One-Dimensional VO₂ Structures

Figure 10

Representative devices utilizing MIT in quasi-1D VO₂ nanostructures. (a) The design and principle of operation of VO₂ nanowire MIT gas sensor (left panel). and indicate heat fluxes dissipating into the gas environment and metal contacts, respectively. Current (I)-bias voltage (V) curves of a self-heated nanowire at different gas pressures showing transition voltages (forward direction) (right panel). (b) I-V curves under different tensile and compressive strains (left panel) and their corresponding response to the strain switch (right panel). (c) Schematic illustration of two-terminal nanobeam device placed on Kapton (left panel). Electrical switch with the strain change based on single domain at DC voltage of 9.5 V (right panel). Panels (a), (b), and (c) adapted with permission from [40, 41] and [42], respectively.

(a)

(b)

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