Metal-Insulator Phase Transition in Quasi-One-Dimensional VO₂ Structures

Figure 4

(a) Conductivity versus temperature (T) for a suspended VO₂ nanobeam device. (b) SEM images showing suspended VO₂ nanobeam devices before and after hydrogen. Optical images of VO₂ microcrystals with thicknesses of ~300 nm on a silicon oxide substrate taken at 30°C (lower left panel) and 135°C (lower middle panel) and at 30°C (lower right panel) after hydrogen doping. The brighter region is a 20 nm gold film deposited to cover parts of the crystals. The scale bar in the lower right panel of (b) applies to all three images. Panels (a) and (b) adapted with permission from [32].

(a)

(b)