Research Article
Interface Study on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-k Gate Dielectric Materials
Figure 3
Various insulating layers with ±5 V stress for comparison: (a) PECVD SiO2, (b) E-gun Al2O3, (c) PECVD Si3N4, and (d) SiO2 control sample of furnace process.
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| (b) |
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