Interface Study on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-k Gate Dielectric Materials

Table 1

The summary table for the a-IGZO TFTs using high-k materials.

	(V)	S.S (V/dec.)	(cm^2/V-s)	/
PECVD SiO2	0.09	0.100	3.50	2.1 × 10^−5
PECVD Si3N4	0.20	0.151	8.96	8.5 × 10^−6
E-gun Al2O3	−0.03	0.270	8.07	8.4 × 10^−6