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Journal of Nanomaterials
Volume 2015, Article ID 903098, 6 pages
Research Article

Mobility Limitations due to Dislocations and Interface Roughness in AlGaN/AlN/GaN Heterostructure

1Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Key Laboratory of Photonics Technology for Information of Shaanxi Province, and ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for Informatics, School of Electronics and Information Engineering, Xi’an Jiaotong University, Xi’an 710049, China
2China Satellite Maritime Tracking and Control Department, Jiangyin 214431, China

Received 12 March 2015; Revised 29 May 2015; Accepted 8 June 2015

Academic Editor: Meiyong Liao

Copyright © 2015 Qun Li et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The dislocations and surface roughness in an AlGaN/AlN/GaN heterostructure were analyzed by transmission electron microscopy (TEM) and atomic force microscopy (AFM), respectively, and the mobility limitation mechanisms in the two-dimensional electron gas (2DEG) were studied using a theoretical model that took into account the most important scattering mechanisms. An exponential correlation function provides a better description of the statistical properties of surface roughness than the Gaussian form and thus is adopted in the theoretical model. The calculated results are in good agreement with Hall data. The quantitative measurements of dislocations and surface roughness allow the evaluation of the relative importance of each extrinsic scattering mechanism.