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Journal of Nanomaterials
Volume 2015, Article ID 903098, 6 pages
http://dx.doi.org/10.1155/2015/903098
Research Article

Mobility Limitations due to Dislocations and Interface Roughness in AlGaN/AlN/GaN Heterostructure

1Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Key Laboratory of Photonics Technology for Information of Shaanxi Province, and ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for Informatics, School of Electronics and Information Engineering, Xi’an Jiaotong University, Xi’an 710049, China
2China Satellite Maritime Tracking and Control Department, Jiangyin 214431, China

Received 12 March 2015; Revised 29 May 2015; Accepted 8 June 2015

Academic Editor: Meiyong Liao

Copyright © 2015 Qun Li et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Qun Li, Jingwen Zhang, Li Meng, Jing Chong, and Xun Hou, “Mobility Limitations due to Dislocations and Interface Roughness in AlGaN/AlN/GaN Heterostructure,” Journal of Nanomaterials, vol. 2015, Article ID 903098, 6 pages, 2015. https://doi.org/10.1155/2015/903098.