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Journal of Nanomaterials
Volume 2016, Article ID 8219326, 6 pages
Research Article

p-Channel and n-Channel Thin-Film-Transistor Operation on Sprayed ZnO Nanoparticle Layers

Interdisciplinary Graduate School of Science and Engineering, Shimane University, 1060 Nishikawatsucho, Matsue 690-8504, Japan

Received 26 April 2016; Accepted 3 July 2016

Academic Editor: Antonios Kelarakis

Copyright © 2016 Daiki Itohara et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Both n-channel and p-channel thin-film transistors have been realized on ZnO nanoparticle (NP) layers sprayed onto quartz substrates. In this study, nitrogen-doped ZnO-NPs were synthesized using an arc-discharge-mediated gas-evaporation method that was recently developed. Sprayed NP layers were characterized by scanning electron microscopy and Hall effect measurements. It was confirmed that p-type behaving NP layers can be obtained using ZnO-NPs synthesized with lower chamber pressure, whereas n-type conductivity can be obtained with higher chamber pressure. pn-junction diodes were also tested, resulting in clear rectifying characteristics. The possibility of particle-process-based ZnO-NP electronics was confirmed.