Research Article
Influence of Radiation on the Luminescence of Silicon Nanocrystals Embedded into SiO2 Film
Figure 5
Distribution of the activation energy of annealing of radiation damage in nc-Si/SiO2 structure. Segments were obtained from the results of isothermal annealing. Curve 4 was obtained from the results of isochronous annealing. The value of is 107 s−1. Triangles reflect the results obtained from analysis of isochronal annealing, which is described in the caption of Figure 5.